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SUM40N15-38
New Product
Vishay Siliconix
N-Channel 150-V (D-S) 175_C MOSFET
FEATURES PRODUCT SUMMARY
V(BR)DSS (V)
150
rDS(on) (W)
0.038 @ VGS = 10 V 0.042 @ VGS = 6 V
ID (A)
40 38
D D D D
TrenchFETr Power MOSFETS 175_C Junction Temperature New Low Thermal Resistance Package PWM Optimized
APPLICATIONS
D Primary Side Switch
D
TO-263
G
G
DS S N-Channel MOSFET
Top View Ordering Information: SUM40N15-38
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cc TC = 25_C TC = 125_C
Symbol
VDS VGS ID IDM IAR EAR PD TJ, Tstg
Limit
150 "20 40 23 80 40 80 166b 3.75 - 55 to 175
Unit
V
A
mJ W _C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount Junction-to-Case (Drain) Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). Document Number: 72155 S-03534--Rev. A, 24-Mar-03 www.vishay.com TO-263c)
Symbol
RthJA RthJC
Limit
40 0.9
Unit
_C/W
1
SUM40N15-38
Vishay Siliconix
New Product
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 120 V, VGS = 0 V Zero Gate Voltage Drain Current g IDSS VDS = 120 V, VGS = 0 V, TJ = 125_C VDS = 120 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 15 A Drain-Source On-State Drain Source On State Resistancea VGS = 6 V, ID = 10 A rDS( ) DS(on) VGS = 10 V, ID = 15 A, TJ = 125_C VGS = 10 V, ID = 15 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 15 A 10 80 0.030 0.033 0.038 0.042 0.076 0.100 S W 150 V 2 4 "100 1 50 250 A m mA nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDD = 75 V, RL = 1.80 W ID ^ 40 A, VGEN = 10 V, RG = 2.5 W VDS = 75 V, VGS = 10 V, ID = 40 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 2500 290 190 2 38 13 13 15 130 30 90 25 200 45 140 ns 60 nC W pF
Turn-Off Delay Timec Fall Timec
Source-Drain Diode Ratings and Characteristics (TC =
Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr
25_C)b
40 80 IF = 40 A, VGS = 0 V 1.0 100 IF = 40 A, di/dt = 100 A/ms , m 5 0.25 1.5 150 8 0.6 A V ns A mC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.
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Document Number: 72155 S-03534--Rev. A, 24-Mar-03
SUM40N15-38
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
80 VGS = 10 thru 7 V I D - Drain Current (A) I D - Drain Current (A) 60 6V 60 80
Vishay Siliconix
Transfer Characteristics
40
40
TC = 125_C 20 25_C - 55_C 0
20 5V 0 0 2 4 6 8 10
0
1
2
3
4
5
6
7
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Transconductance
80 TC = - 55_C 60 125_C 40 r DS(on) - On-Resistance ( W ) 25_C g fs - Transconductance (S) 0.06 0.08
On-Resistance vs. Drain Current
VGS = 6 V VGS = 10 V 0.04
20
0.02
0 0 10 20 ID - Drain Current (A) 30 40
0.00 0 20 40 ID - Drain Current (A) 60 80
Capacitance
4000 20
Gate Charge
3200 C - Capacitance (pF) Ciss
V GS - Gate-to-Source Voltage (V)
16
VDS = 75 V ID = 40 A
2400
12
1600
8
800
Crss
4
Coss
0 0 25 50 75 100 125 150
0 0 15 30 45 60 75
VDS - Drain-to-Source Voltage (V) Document Number: 72155 S-03534--Rev. A, 24-Mar-03
Qg - Total Gate Charge (nC) www.vishay.com
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SUM40N15-38
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.7 2.4 r DS(on) - On-Resistance (W) (Normalized) 2.1 1.8 1.5 1.2 0.9 0.6 0.3 - 50 1 0 VGS = 10 V ID = 15 A I S - Source Current (A) 100
Source-Drain Diode Forward Voltage
TJ = 150_C 10 TJ = 25_C
- 25
0
25
50
75
100
125
150
175
0.3
0.6
0.9
1.2
TJ - Junction Temperature (_C)
VSD - Source-to-Drain Voltage (V)
Drain Source Breakdown vs. Junction Temperature
195
185 V (BR)DSS (V)
ID = 1 mA
175
165
155
145 - 50
- 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (_C)
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Document Number: 72155 S-03534--Rev. A, 24-Mar-03
SUM40N15-38
New Product
THERMAL RATINGS
Vishay Siliconix
Maximum Avalanche and Drain Current vs. Case Temperature
45 1000
Safe Operating Area
Limited by rDS(on) 100 I D - Drain Current (A) 10 ms 100 ms 10 1 ms 10 ms 1 TC = 25_C Single Pulse dc, 100 ms
36 I D - Drain Current (A)
27
18
9
0 0 25 50 75 100 125 150 175
0.1 0.1 1 10 100 1000
TC - Ambient Temperature (_C)
VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 Single Pulse
0.01 10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (sec)
Document Number: 72155 S-03534--Rev. A, 24-Mar-03
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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